Is backside photoemission necessary? [IC failure analysis]

Author

Albrecht, David R., II

Author_Institution

Dominion Semicond. LLC, Manassas, VA, USA

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

149

Lastpage

152

Abstract

This paper presents a case to justify the purchase of commercially available, state of the art, backside-capable photoemission microscope (PEM) systems to support failure analysis and yield learning for DRAM and flash memory manufacturers. An investigation was conducted to evaluate the existing emission capabilities at Dominion Semiconductor (DSC), examine the possibility of upgrades and if necessary, visit several emission microscope manufacturers to determine which system would be best suited for use on our products

Keywords

DRAM chips; failure analysis; flash memories; integrated circuit testing; integrated circuit yield; optical microscopy; photoemission; DRAM; IC failure analysis; backside photoemission; backside-capable photoemission microscope systems; emission capabilities; emission microscope manufacturers; failure analysis; flash memory manufacture; yield learning; Cameras; Costs; Failure analysis; Lenses; Microscopy; Packaging; Photoelectricity; Random access memory; Semiconductor device manufacture; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 2001. Proceedings of the Fourteenth Biennial

Conference_Location

Richmond, VA

ISSN

0749-6877

Print_ISBN

0-7803-6691-3

Type

conf

DOI

10.1109/UGIM.2001.960318

Filename

960318