DocumentCode :
1721239
Title :
Calculation of threshold current density in 633-nm AlGaInP/GaInP strained quantum well lasers
Author :
Domen, K. ; Ishikawa, H. ; Sugawara, M. ; Kondo, M. ; Furuya, A. ; Tanahashi, T.
Author_Institution :
Fujitsu Laboratores Ltd.
fYear :
1994
fDate :
6/16/1905 12:00:00 AM
Firstpage :
15
Lastpage :
16
Keywords :
Capacitive sensors; Current density; Effective mass; Laser theory; Optical mixing; Optical saturation; Quantum mechanics; Quantum well lasers; Tensile strain; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
Type :
conf
DOI :
10.1109/DRC.1994.1009396
Filename :
1009396
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1721239
