Title :
Meniscus interface etching of silicon in KOH in a hands-on introductory course in MEMS
Author :
Schultz, J. ; Ivanov, D.V. ; Farmer, K.R.
Author_Institution :
Microelectron. Res. Center, New Jersey Inst. of Technol., Newark, NJ, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
We describe a bulk micromachining technique for etching one side of a silicon wafer in KOH without the need for substantial protection of features on the opposite side. The approach uses meniscus properties of the etchant to draw fluid to the surface of a wafer that is suspended above the bath. Complete etching through the wafer is possible. This technique has been developed as part of a new course in MEMS that is also briefly described
Keywords :
educational courses; electronic engineering education; elemental semiconductors; etching; micromachining; micromechanical devices; potassium compounds; silicon; KOH; KOH etchant; MEMS; MEMS introductory course; Si; bulk micromachining technique; etchant meniscus properties; etching; etching bath; feature protection; meniscus interface etching; silicon; silicon wafer; suspended wafer surface; Accelerometers; Etching; Fabrication; Microelectromechanical devices; Micromachining; Micromechanical devices; Packaging; Sensor phenomena and characterization; Silicon; Testing;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2001. Proceedings of the Fourteenth Biennial
Conference_Location :
Richmond, VA
Print_ISBN :
0-7803-6691-3
DOI :
10.1109/UGIM.2001.960319
