Title :
NMOS digital integrated circuits in 6h silicon carbide
Author :
Xie, Weize ; Cooper, James A., Jr. ; Melloch, M.R.
Author_Institution :
Purdue University
fDate :
6/16/1905 12:00:00 AM
Keywords :
Annealing; Argon; Digital integrated circuits; MOS devices; MOSFETs; Ohmic contacts; Pulse inverters; Semiconductor materials; Silicon carbide; Temperature;
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
DOI :
10.1109/DRC.1994.1009399
