Title :
4H-silicon carbide mesfet with 2.8 W/mm rf power density
Author :
Palmour, J.W. ; Weitzel, C.E. ; Nordquist, K.J. ; Carter, C.H.
Author_Institution :
Cree- Research Inc.
fDate :
6/16/1905 12:00:00 AM
Keywords :
Breakdown voltage; Cutoff frequency; Doping; Electron mobility; MESFETs; Power generation; Radio frequency; Scattering parameters; Silicon carbide; Thermal conductivity;
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
DOI :
10.1109/DRC.1994.1009401
