Title :
Charge storage characteristics of SiO2/Si3N4 double layer electret
Author :
Hong, Nung-Pyo ; Hong, Jin-Woong
Author_Institution :
Fairchild Semicond. Korea Ltd., Buchon, South Korea
Abstract :
SiO2/Si3N4 double layer has better charge storage stability than SiO2 single layer. The charge storage mechanism of SiO2/Si3N4 has been the subject of interest for many researchers. This paper investigates the electrical characteristics of thermal oxide and the atmospheric pressure chemical vapor deposition (APCVD) Si3N4 using high frequency capacitance voltage measurements. Additionally, this paper describes the capacitance-voltage characteristics of SiO2/Si3N4 double layer obtained through Athena, a semiconductor device simulation tool made by Silvaco, Inc.
Keywords :
capacitance; chemical vapour deposition; electrets; electric charge; silicon compounds; SiO2-Si3N4; atmospheric pressure chemical vapor deposition; charge storage stability; double layer electret; electrical characteristics; high frequency capacitance voltage measurements; semiconductor device simulation tool; thermal oxide; Atmospheric measurements; Capacitance measurement; Capacitance-voltage characteristics; Chemical vapor deposition; Electric variables; Electric variables measurement; Frequency measurement; Pressure measurement; Stability; Voltage measurement;
Conference_Titel :
Solid Dielectrics, 2004. ICSD 2004. Proceedings of the 2004 IEEE International Conference on
Print_ISBN :
0-7803-8348-6
DOI :
10.1109/ICSD.2004.1350317
