DocumentCode :
1721466
Title :
Minority carrier transport parameters in n-Si/p+-Si1-xGex/n-Si HBTs using A.C. and D.C. measurements
Author :
Ghani, T. ; Hoyt, J.L. ; Weybright, M.E. ; Gibbons, J.F.
Author_Institution :
Solid State Electronics Laboratory
fYear :
1994
fDate :
6/16/1905 12:00:00 AM
Firstpage :
39
Lastpage :
40
Keywords :
Current measurement; Doping; Electrons; Heterojunction bipolar transistors; Photonic band gap; Silicon; Solid state circuits; Statistics; Temperature dependence; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
Type :
conf
DOI :
10.1109/DRC.1994.1009406
Filename :
1009406
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1721466
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