Title :
Microwave monolithic selective tunable amplifiers using space-charge waves in the GaAs films
fDate :
6/23/1905 12:00:00 AM
Abstract :
A new kind of IC based on space-charge waves at GaAs films is considered. The devices combine functions of microwave/millimeter range complex signal formers and optimal receivers. The unique property of the devices is their capability to work at the carrier frequency, particularly directly at the microwave receiver input, protecting the whole system from jamming
Keywords :
III-V semiconductors; MMIC amplifiers; circuit tuning; gallium arsenide; microwave receivers; millimetre wave amplifiers; millimetre wave receivers; space charge waves; GaAs; GaAs IC; GaAs films; carrier frequency operation; microwave monolithic selective tunable amplifiers; microwave range complex signal formers; microwave receiver input; millimeter range complex signal formers; optimal receivers; space-charge waves; system jamming; Dielectric constant; Differential equations; Electron mobility; Frequency; Gallium arsenide; Microwave amplifiers; Microwave devices; Millimeter wave devices; Semiconductor films; Surface waves;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2001. Proceedings of the Fourteenth Biennial
Conference_Location :
Richmond, VA
Print_ISBN :
0-7803-6691-3
DOI :
10.1109/UGIM.2001.960327
