Title :
Modifying residual stress and stress gradient in LPCVD Si3N4 film with ion implantation
Author :
Shi, Wendian ; Zhang, Haixia ; Wang, Shasha ; Zhang, Guobing ; Li, Zhihong
Author_Institution :
Nat. Key Lab. of Nano/Micro Fabrication Technol., Peking Univ., Beijing, China
Abstract :
The paper presents a method for modifying residual stress in LPCVD Si3N4 films. Utilizing ion implantation technology, the residual stress and stress gradient in Si3N4 film have been successfully modified with a wide adjustable range. An analytical model has been developed to describe the modification. The dosage and energy of ion implantation can be controlled accurately, and therefore the presented method can modify stress level precisely. With this method, the mean residual stress in a Si3N4 film was adjusted from 1.2 GPa tensile to -0.1 GPa compressive continuously. Moreover, cantilever curling caused by stress gradient was reduced efficiently.
Keywords :
chemical vapour deposition; dielectric thin films; internal stresses; ion implantation; micromachining; micromechanical devices; silicon compounds; LPCVD Si3N4 film; MEMS; Si3N4; analytical model; cantilever curling; dielectric material; ion implantation; passivation layer; residual stress modification; silicon nitride film; stress gradient modification; Analytical models; Compressive stress; Ion implantation; Micromechanical devices; Plasma temperature; Residual stresses; Semiconductor films; Silicon; Stress control; Tensile stress;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
DOI :
10.1109/SENSOR.2005.1496544
