DocumentCode :
1721496
Title :
90 GHz f max SiGe-HBTs
Author :
Schuppen, A. ; Gruhle, A. ; Erben, U. ; Kibbel, H. ; König, U.
Author_Institution :
Daimler Benz AG
fYear :
1994
fDate :
6/16/1905 12:00:00 AM
Firstpage :
41
Lastpage :
42
Keywords :
Boron; Circuits; Doping; Electrical resistance measurement; Electron devices; Frequency; Germanium silicon alloys; Plasma measurements; Plasma temperature; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
Type :
conf
DOI :
10.1109/DRC.1994.1009407
Filename :
1009407
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1721496
