Title :
Near-ideal breakdown Si/SiGe heterojunction bipolar transistors for microwave power
Author :
Hobart, K.D. ; Kub, F.J. ; Papanicolaou, N.A. ; Kruppa, W. ; Thompson, P.E.
Author_Institution :
SFA, Inc.
fDate :
6/16/1905 12:00:00 AM
Keywords :
Breakdown voltage; Doping; Electric breakdown; Electrical resistance measurement; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Silicon germanium; Thermal conductivity;
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
DOI :
10.1109/DRC.1994.1009408
