Title :
Temperature-dependent fracture toughness of single-crystal-silicon film
Author :
Nakao, Shigeki ; Ando, Taeko ; Shikida, Mitsuhiro ; Sato, Kazuo
Author_Institution :
Dept. of Micro-Nano Syst. Eng., Nagoya Univ., Japan
Abstract :
We evaluated the fracture toughness of micron-sized single-crystal-silicon film at temperatures ranging from 293 K to 773 K by using an "on-chip" tensile testing method. We made a 1-μm-long notch on one side of a thin film specimen using a focused ion beam (FIB) process. The fracture toughness was 1.29 MPam12/ at room temperature. It rapidly increased at 353 K, reaching almost double that at room temperature and then saturated at higher temperatures. A few specimens tested at 423 K and 573 K showed a non-linear relationship between stress and strain due to plastic deformation around the notch.
Keywords :
focused ion beam technology; fracture toughness; internal stresses; micromachining; micromechanical devices; plastic deformation; semiconductor thin films; silicon; temperature; tensile testing; 1 micron; 293 to 773 K; FIB process; MEMS fabrication; Si; focused ion beam process; micron-sized single-crystal-silicon film; nonlinear stress-strain relationship; on-chip tensile testing method; plastic deformation; room temperature; temperature-dependent fracture toughness; Bars; Crystalline materials; Fabrication; Force measurement; Ion beams; Micromechanical devices; Optical propagation; Stress; Temperature distribution; Testing;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
DOI :
10.1109/SENSOR.2005.1496546
