Title :
Anisotropic fracture behavior of notched tensile single crystal silicon thin film specimens on microscale [MEMS material applications]
Author :
Li, Xueping ; Kasai, Takashi ; Ando, Taeko ; Shikida, Mitsuhiro ; Sato, Kazuo
Author_Institution :
Dept. of Micro-Nano Syst. Eng., Nagoya Univ., Japan
Abstract :
We investigated the fracture behaviors of single crystal silicon thin films on microscale, using single-edge-notched tensile specimens. We tested five specimen types with different surface orientations and tensile directions. The specimens´ fracture behavior showed an obvious crystallography orientation dependency. When vertical {111} planes to the specimen surface exist, cracks propagate on the {111} - <112> cleavage system. When no vertical {111} planes exist, cracks propagate on inclined {111} - <112> cleavage system. We believe that this is because the minimum surface energy is on {111} planes.
Keywords :
brittle fracture; crystal orientation; elemental semiconductors; fracture toughness; fracture toughness testing; micromechanical devices; notch testing; semiconductor thin films; silicon; surface energy; 111 planes minimum surface energy; Si; cleavage system; crack propagation; crystallography orientation dependency; microscale anisotropic fracture; notched tensile single crystal thin films; single-edge-notched specimens; surface orientation; tensile direction; vertical planes; Anisotropic magnetoresistance; Crystallography; Scanning electron microscopy; Semiconductor films; Semiconductor thin films; Silicon; Surface cracks; Tensile stress; Testing; Thin film sensors;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
DOI :
10.1109/SENSOR.2005.1496549
