DocumentCode :
1721580
Title :
High performance poly-si thin film transistors (TFTs) fabricated by xecl excimer laser annealing without post-hydrogenation
Author :
Talwar, Somit ; Cao, Min ; Kramer, K. Josef ; Verma, Gaurav ; Saraswat, Krishna C. ; Sigmon, Thomas W.
Author_Institution :
Stanford University
fYear :
1994
fDate :
6/16/1905 12:00:00 AM
Firstpage :
49
Lastpage :
50
Keywords :
Annealing; Gas lasers; Leakage current; MOS devices; Optical pulses; Plasma displays; Plasma temperature; Pulsed laser deposition; Thermal conductivity; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
Type :
conf
DOI :
10.1109/DRC.1994.1009411
Filename :
1009411
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1721580
