An empirical nonlinear MESFET model based on multibias measurements

Author

Abdallah, E.A. ; El-Tager, A.M.

Author_Institution

Electron. Res. Inst., Nat. Res. Centre, Cairo, Egypt

Volume

2

fYear

1999

fDate

11/1/1999 12:00:00 AM

Firstpage

468

Abstract

A successful modeling technique that leads to a highly accurate nonlinear MESFET model is presented. This model is implemented based on accurate device measurements at different bias voltages using an HP8510C network analyzer. The parameters of the most commonly used nonlinear empirical models like Curtice quadratic, Curtice cubic and Starz models are extracted using GASMAP and FETMEX programs. The best model has been determined and tested for DC and AC operation through computer simulation, which gave more accurate results than existing models. Then, it has been successfully applied in the design and realization of a microstrip oscillator at 8.5 GHz

Keywords

Schottky gate field effect transistors; microstrip components; microwave field effect transistors; microwave oscillators; semiconductor device models; 8.5 GHz; AC operation; Curtice cubic model; Curtice quadratic model; DC operation; FETMEX program; GASMAP program; HP8510C network analyzer; MESFET; Starz model; computer simulation; empirical nonlinear model; microstrip oscillator; multibias measurement; parameter extraction; Capacitance; Circuit testing; Computer simulation; Educational institutions; MESFETs; Microstrip; Oscillators; Packaging; Scattering parameters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1999 Asia Pacific

Print_ISBN

0-7803-5761-2

Type

conf

DOI

10.1109/APMC.1999.829908

Filename

829908