Fabrication of polysilicon gated-nanowires and their application for pA precision current measurements

Author

Ecoffey, Serge ; Pott, Vincent ; Bouvet, Didier ; Leblebici, Yusuf ; Declercq, Michel ; Ionescu, Adrian Mihai

Author_Institution

Electron. Lab., Swiss Fed. Inst. of Technol., Lausanne, Switzerland

Volume

1

fYear

2005

Firstpage

859

Abstract

This paper reports on the fabrication and use of CMOS-compatible nanograin n-doped polysilicon gated-nanowires (polySiNW) for application in precise current measurements with less-than 1 pA resolution. A technological process is proposed to co-fabricate polySiNWs and n-channel MOSFETs. The investigation of the V-shape characteristic of I_D-V_G extracted from fabricated polySiNWs is presented. A new bias scheme in order to use the nanowires as low current sensors is given. Finally, the effect of temperature on the conduction of polySiNWs is shown.

Keywords

MOSFET; electric current measurement; elemental semiconductors; nanowires; silicon; CMOS-compatible nanograin nanowires; Si; conduction temperature effects; hybrid co-fabrication; low current sensor bias scheme; n-channel MOSFET; n-doped polysilicon gated-nanowires; polySiNW; precision current measurements; CMOS technology; Current measurement; Fabrication; MOSFETs; Nanoelectronics; Nanowires; Resistors; Sensor phenomena and characterization; Silicon; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on

Print_ISBN

0-7803-8994-8

Type

conf

DOI

10.1109/SENSOR.2005.1496553

Filename

1496553