Performance and reliability study of Si(111) CMOS subjected to high mechanical stress for smart sensor application

Author

Vatedka, Radhakrishna ; Kato, Yu ; Takao, Hidekuni ; Sawada, Kazuaki ; Ishida, Makoto

Author_Institution

Venture Bus. Lab., Toyohashi Univ. of Technol., Japan

Volume

1

fYear

2005

Firstpage

871

Abstract

In view of the development of new smart sensors such as silicon microprobes fabricated on Si(111), we explain the performance of Si(111) MOSFETs in comparison with Si(100) MOSFETs. The channel direction effect on the MOSFET performance has been studied for different oriented substrates. Investigation on Si(100) and Si(111) MOSFETs subjected to high mechanical stress was carried out using the 4-point bending method. Sensitivity was estimated for uniaxial longitudinal stress, for compressive stress and tensile stress. Biasing condition effects on stress sensitivity were also studied.

Keywords

MOSFET; crystal orientation; elemental semiconductors; intelligent sensors; microsensors; piezoresistance; silicon; CMOS reliability; Si; Si(100) MOSFET; Si(111) MOSFET; channel direction effects; compressive stress; four-point bending method; high mechanical stress; microprobes; piezoresistance coefficient; smart sensors; stress sensitivity biasing condition effects; substrate orientation; tensile stress; uniaxial longitudinal stress; CMOS technology; Compressive stress; Electron mobility; Intelligent sensors; MOSFET circuits; Piezoresistive devices; Probes; Reliability engineering; Silicon; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on

Print_ISBN

0-7803-8994-8

Type

conf

DOI

10.1109/SENSOR.2005.1496556

Filename

1496556