Title :
Impact of highly-doped s/d extension on the current drivability and reliability in 0.15μm CMOS
Author :
Nara, Y. ; Kurata, H. ; Yamazaki, T. ; Sugii, T.
Author_Institution :
Fujitsu Laboratories Ltd.
fDate :
6/16/1905 12:00:00 AM
Keywords :
Capacitance; Fabrication; Hot carriers; Implants; Impurities; MOS devices; MOSFETs; Stress; Surface resistance; Voltage;
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
DOI :
10.1109/DRC.1994.1009420
