DocumentCode :
1721822
Title :
Degradation of thin SiO
2
gate oxides by atomic hydrogen
Author :
Cartier, E. ; DiMaria, D.J. ; Buchanan, D.A. ; Stathis, J. ; Abadeer, W.W. ; Vollertsen, R.-P.
Author_Institution :
IBM Rescarch Division
fYear :
1994
fDate :
6/16/1905 12:00:00 AM
Firstpage :
73
Lastpage :
74
Keywords :
CMOS technology; Chemistry; Degradation; Design for quality; Hardware; Hydrogen; Impact ionization; Leakage current; Predictive models; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
Type :
conf
DOI :
10.1109/DRC.1994.1009421
Filename :
1009421
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1721822
