Fully integrated ferrite-based inductors for RF ICs

Author

Liu, F. ; Yang, C. ; Ren, T.L. ; Liu, L.T. ; Feng, H.G. ; Wang, A.Z. ; Long, H.B. ; Yu, J.

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

Volume

1

fYear

2005

Firstpage

895

Abstract

Ferrite thin-film RF integrated inductors using IC compatible processes are proposed firstly. Ferrites (Co-based, CoFe-based, MnZn-based, NiZn-based and garnet) for RF integrated inductors are investigated, and CoZrO shows the suitable high-frequency performance for RF applications. Various inductors with different kinds of ferrite thin-films have been fabricated using fully integrated processes. A typical inductor sample with CoZrO thin-film is presented. The L and Q values of the sample are 2.05 nH and 20.5 at 2 GHz, respectively. The inductance is raised by 17% and the quality factor is raised by 41%, compared with the inductor which does not include a ferrite thin-film. With the improvement of L and Q, the size of ferrite thin-film inductors can be reduced significantly.

Keywords

Q-factor; cobalt compounds; ferrite devices; radiofrequency integrated circuits; thin film inductors; zirconium compounds; 2 GHz; CoZrO; IC compatible processes; RFIC; ferrite thin-film inductors; fully integrated ferrite-based inductors; inductance increase; quality factor increase; Ferrite films; Inductance; Magnetic films; Magnetic materials; Magnetic resonance; Permeability; Radio frequency; Radiofrequency integrated circuits; Soft magnetic materials; Thin film inductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on

Print_ISBN

0-7803-8994-8

Type

conf

DOI

10.1109/SENSOR.2005.1496562

Filename

1496562