Title :
The importance of inversion-layer capacitance in Si MOSFETs in the ultra-thin gate oxide regime
Author :
Takagi, Shin-ichi ; Toriumi, Akira
Author_Institution :
TOSHIBA Corporation
fDate :
6/16/1905 12:00:00 AM
Keywords :
Capacitance measurement; Degradation; Germanium silicon alloys; Laboratories; MOSFETs; Quantum capacitance; Quantum mechanics; Silicon germanium; Temperature dependence; Thickness measurement;
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
DOI :
10.1109/DRC.1994.1009425
