Title :
Permanent single event functional interrupts (SEFIs) in 128- and 256-megabit synchronous dynamic random access memories (SDRAMs)
Author :
Koga, R. ; Yu, P. ; Crawford, K.B. ; Crain, S.H. ; Tran, V.T.
Author_Institution :
The Aerosp. Corp., Los Angeles, CA, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
Permanent Single Event Functional Interrupts (SEFIs) have been observed in several high density Synchronous Dynamic Random Access Memories (SDRAMs). Affected devices often lose both Read and Write functions
Keywords :
DRAM chips; radiation hardening (electronics); 128 Mbit; 256 Mbit; SDRAMs; permanent single event functional interrupts; read functions; synchronous dynamic random access memories; write functions; Aerodynamics; Aerospace testing; CMOS technology; Content addressable storage; Logic devices; Manufacturing; Packaging; Radio access networks; SDRAM; Telephony;
Conference_Titel :
Radiation Effects Data Workshop, 2001 IEEE
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-7199-2
DOI :
10.1109/REDW.2001.960441
