DocumentCode :
1722153
Title :
Characterization of various SEE hardened power management ICs
Author :
Alaskiewicz, Brian P. ; Doyle, Brent R. ; Newman, Warren H.
Author_Institution :
Intersil Corp., Palm Bay, FL, USA
fYear :
2001
fDate :
6/23/1905 12:00:00 AM
Firstpage :
26
Lastpage :
31
Abstract :
Single event effects test results are reported for several power management devices that have been specifically SEE-hardened by design. Single event transient, as well as single event latchup data is presented and discussed
Keywords :
ion beam effects; power control; power integrated circuits; radiation hardening (electronics); SEE hardened power management ICs; single event effects; single event latchup data; Circuit testing; Energy management; MOS devices; Packaging; Performance evaluation; Power control; Power system reliability; Radiation hardening; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2001 IEEE
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-7199-2
Type :
conf
DOI :
10.1109/REDW.2001.960444
Filename :
960444
Link To Document :
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