Title :
Single event upset characterization of the Pentium(R) MMX and low power Pentium(R) MMX microprocessors using proton irradiation
Author :
Hienistra, D.M. ; Yu, Simon ; Pop, Marius
Author_Institution :
MDRobotics, Brampton, Ont., Canada
fDate :
6/23/1905 12:00:00 AM
Abstract :
Experimental single event upset characterization of the Pentium(R) MMX and Low Power Pentium(R) MMX microprocessors using proton irradiation is presented. Results are compared with previous tests on the Pentium It MMX, Pentium(R) II, and Celeron(R)
Keywords :
CMOS integrated circuits; microprocessor chips; proton effects; radiation hardening (electronics); 120 MeV; 200 MHz; 200 MeV; 233 MHz; Pentium(R) MMX microprocessors; low power Pentium(R) MMX microprocessors; proton irradiation; single event upset; CMOS process; Energy states; Manufacturing processes; Microprocessors; Protons; Single event upset; Space shuttles; Space stations; Telephony; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 2001 IEEE
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-7199-2
DOI :
10.1109/REDW.2001.960445
