Title :
Total-dose and single-event-upset (SEU) resistance in advanced SRAMs fabricated on SOI using 0.2 μm design rules
Author :
Hirose, Keikichi ; Saito, H. ; Akiyama, M. ; Arakaki, M. ; Kuroda, Y. ; Ishii, S. ; Nakano, K.
Author_Institution :
Inst. of Space & Astronaut. Sci., Kanagawa, Japan
fDate :
6/23/1905 12:00:00 AM
Abstract :
We measured total-dose and single-event-upset (SEU) resistance in advanced 128-Kbit SRAMs fabricated on SOI using 0.2 μm design rules. Our results indicate that the 128-Kbit SRAMs can be used in specific space technologies
Keywords :
SRAM chips; radiation effects; silicon-on-insulator; space vehicle electronics; 0.2 μm design rules; 0.2 micron; 128 Kbit; SEU resistance; SOI; SRAM; advanced 128-Kbit SRAMs; single-event-upset resistance; space technology; total-dose resistance; Costs; Current measurement; Electrical resistance measurement; Fabrication; Immune system; Random access memory; Satellites; Silicon on insulator technology; Single event upset; Space technology;
Conference_Titel :
Radiation Effects Data Workshop, 2001 IEEE
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-7199-2
DOI :
10.1109/REDW.2001.960447
