• DocumentCode
    1722327
  • Title

    Highly doped n-type silicon theoretical optimization

  • Author

    Stem, N. ; Cid, M.

  • Author_Institution
    Lab. de Microelectron., Sao Paulo Univ., Brazil
  • Volume
    2
  • fYear
    1997
  • Firstpage
    637
  • Abstract
    Considering the recent modification of n-type highly doped silicon parameters, this work has been based on one-dimensional models with analytical solutions. In order to obtain a good accuracy, a fifth order approximation has been considered. Passivated emitters with a Gaussian profile of n+pp+ solar cells were optimized. According to our results, emitter solar cells show their best efficiencies (η≅21.60-21.70%) with Ns=1×1019-5×1018 (cm-3 ) and (1.2-2.0) μm emitter thickness range
  • Keywords
    current density; doping profiles; elemental semiconductors; heavily doped semiconductors; optimisation; semiconductor device models; silicon; solar cells; 1.2 to 2 micron; 21.6 to 21.7 percent; Gaussian profile; fifth order approximation; highly doped Si; n-type; n+pp+ solar cells; optimization; passivated emitters; Analytical models; Conductivity; Current density; Doping; Equations; Gaussian processes; Passivation; Photovoltaic cells; Semiconductor process modeling; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Optoelectronics Conference, 1997. Linking to the Next Century. Proceedings., 1997 SBMO/IEEE MTT-S International
  • Conference_Location
    Natal
  • Print_ISBN
    0-7803-4165-1
  • Type

    conf

  • DOI
    10.1109/SBMOMO.1997.648834
  • Filename
    648834
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1722327