DocumentCode :
1722474
Title :
Application of phase-shifting mask technology to 0.17μm-gate GaAs MESFET for ultra high speed IC´s
Author :
Ohshima, T. ; Yamamoto, N. ; Ichioka, T. ; Kimura, T. ; Sano, Y.
Author_Institution :
Oki Electric Industry Co. Ltd.
fYear :
1994
fDate :
6/16/1905 12:00:00 AM
Firstpage :
143
Lastpage :
144
Keywords :
Application specific integrated circuits; Gallium arsenide; High speed integrated circuits; MESFET integrated circuits; Photonic integrated circuits; Power dissipation; Propagation delay; Resists; Threshold voltage; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
Type :
conf
DOI :
10.1109/DRC.1994.1009448
Filename :
1009448
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1722474
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