DocumentCode
1722474
Title
Application of phase-shifting mask technology to 0.17μm-gate GaAs MESFET for ultra high speed IC´s
Author
Ohshima, T. ; Yamamoto, N. ; Ichioka, T. ; Kimura, T. ; Sano, Y.
Author_Institution
Oki Electric Industry Co. Ltd.
fYear
1994
fDate
6/16/1905 12:00:00 AM
Firstpage
143
Lastpage
144
Keywords
Application specific integrated circuits; Gallium arsenide; High speed integrated circuits; MESFET integrated circuits; Photonic integrated circuits; Power dissipation; Propagation delay; Resists; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1994. 52nd Annual
Type
conf
DOI
10.1109/DRC.1994.1009448
Filename
1009448
Link To Document