DocumentCode
1722555
Title
High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-µm CMOS process
Author
Lin, Chun-Yu ; Li, Yi-Ju ; Ker, Ming-Dou
Author_Institution
Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear
2012
Firstpage
125
Lastpage
128
Abstract
A novel design of high-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic system-on-chip (SoC) in a 0.18-μm CMOS process was proposed. This design can deliver the required stimulus current within a specific range of loading impedance. Besides, this design in 0.18-μm low-voltage CMOS process can be operated at high voltage by using only low-voltage transistors. Without using high-voltage transistors, the process step can be reduced and the fabrication yield can be improved. The proposed design can be further integrated for the electronic epilepsy prosthetic SoC applications.
Keywords
CMOS digital integrated circuits; prosthetics; system-on-chip; adaptive loading consideration; electronic epilepsy prosthetic SoC; high-voltage-tolerant stimulator; loading impedance; low-voltage CMOS process; low-voltage transistors; size 0.18 mum; stimulus current; system-on-chip; CMOS process; Epilepsy; Generators; Impedance; Loading; Transistors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
New Circuits and Systems Conference (NEWCAS), 2012 IEEE 10th International
Conference_Location
Montreal, QC
Print_ISBN
978-1-4673-0857-1
Electronic_ISBN
978-1-4673-0858-8
Type
conf
DOI
10.1109/NEWCAS.2012.6328972
Filename
6328972
Link To Document