Title :
High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-µm CMOS process
Author :
Lin, Chun-Yu ; Li, Yi-Ju ; Ker, Ming-Dou
Author_Institution :
Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
A novel design of high-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic system-on-chip (SoC) in a 0.18-μm CMOS process was proposed. This design can deliver the required stimulus current within a specific range of loading impedance. Besides, this design in 0.18-μm low-voltage CMOS process can be operated at high voltage by using only low-voltage transistors. Without using high-voltage transistors, the process step can be reduced and the fabrication yield can be improved. The proposed design can be further integrated for the electronic epilepsy prosthetic SoC applications.
Keywords :
CMOS digital integrated circuits; prosthetics; system-on-chip; adaptive loading consideration; electronic epilepsy prosthetic SoC; high-voltage-tolerant stimulator; loading impedance; low-voltage CMOS process; low-voltage transistors; size 0.18 mum; stimulus current; system-on-chip; CMOS process; Epilepsy; Generators; Impedance; Loading; Transistors; Voltage control;
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2012 IEEE 10th International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0857-1
Electronic_ISBN :
978-1-4673-0858-8
DOI :
10.1109/NEWCAS.2012.6328972