• DocumentCode
    1722563
  • Title

    Proton radiation damage of Si APD single photon counters

  • Author

    Sun, Xiaoli ; Dautet, Henri

  • Author_Institution
    Laser Remote Sensing Branch, NASA Goddard Space Flight Center, Greenbelt, MD, USA
  • fYear
    2001
  • fDate
    6/23/1905 12:00:00 AM
  • Firstpage
    146
  • Lastpage
    150
  • Abstract
    Proton radiation damage of Si avalanche photodiodes were measured at 53 to 189MeV proton energy. The annealing rates were monitored at -10°C, room temperature, and 55°C. The results are compared with the previously published data
  • Keywords
    annealing; avalanche photodiodes; elemental semiconductors; photon counting; proton effects; silicon; -10 C; 20 C; 53 to 189 MeV; 55 C; Si; Si avalanche photodiode; annealing; proton radiation damage; single photon counter; Annealing; Earth; Extraterrestrial measurements; Instruments; Monitoring; Protons; Radiation detectors; Sun; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2001 IEEE
  • Conference_Location
    Vancouver, BC
  • Print_ISBN
    0-7803-7199-2
  • Type

    conf

  • DOI
    10.1109/REDW.2001.960462
  • Filename
    960462
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1722563