DocumentCode

1722599

Title

0.2μm gatelength, non-alloyed AlInAs/GaInAs JHEMTs with extrinsic ft=62 GHz

Author

Shealy, James B. ; Thompson, M.A. ; DenBaars, Steven P.

Author_Institution

University of California

fYear

1994

fDate

6/16/1905 12:00:00 AM

Firstpage

153

Lastpage

154

Keywords

Breakdown voltage; Electric breakdown; Etching; Fabrication; Frequency; HEMTs; MOCVD; Ohmic contacts; Plasma applications; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1994. 52nd Annual

Type

conf

DOI

10.1109/DRC.1994.1009453

Filename

1009453