DocumentCode

1722637

Title

High performance w-band pseudomorphic InAlAs/InGaAs/InP power HEMTs

Author

Wang, S.C. ; Kao, M.Y. ; Liu, S.M.J. ; Ho, P. ; Duh, K.G.

Author_Institution

Martin Marietta Laboratories

fYear

1994

fDate

6/16/1905 12:00:00 AM

Firstpage

157

Lastpage

158

Keywords

Chemicals; Fabrication; Fingers; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1994. 52nd Annual

Type

conf

DOI

10.1109/DRC.1994.1009455

Filename

1009455