Title :
Responses of radiation-hardened power MOSFETs to neutrons
Author :
Gillberg, James E. ; Burton, Donald I. ; Titus, Jeffrey L. ; Wheatley, C. Frank ; Hubbard, Noel
Author_Institution :
Fairchild Semicond., Somerville, NJ, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
The test results of recent neutron irradiations performed on a variety of radiation-hardened power MOSFETs manufactured by Fairchild Semiconductor are reported here. Twelve device types from four different families with rated drain breakdown voltages from 30 to 500 volts of which most are n-channels and the others are p-channels, were characterized
Keywords :
neutron effects; power MOSFET; radiation hardening (electronics); semiconductor device breakdown; semiconductor device testing; 30 to 500 V; Fairchild Semiconductor; device testing; drain breakdown voltage; n-channel MOSFET; neutron irradiation; p-channel MOSFET; radiation-hardened power MOSFETs; Cranes; Life testing; MOSFETs; Manufacturing; Neutrons; Performance evaluation; Road transportation; Semiconductor device testing; Senior members; Telephony;
Conference_Titel :
Radiation Effects Data Workshop, 2001 IEEE
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-7199-2
DOI :
10.1109/REDW.2001.960465
