In_0.29Al_0.71As/In_0.3Ga_0.7As heterostructure devices grown on GaAs substrates with a metamorphic buffer design

Author

Chan, Y.-J. ; Chyi, J.-I. ; Wu, C.S. ; Hwang, H.P. ; Yang, M.T. ; Lin, R.M. ; Shieh, J.L.

Author_Institution

National Central University

fYear

1994

fDate

6/16/1905 12:00:00 AM

Firstpage

159

Lastpage

160

Keywords

Councils; Gallium arsenide; HEMTs; Voltage; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1994. 52nd Annual

Type

DOI

10.1109/DRC.1994.1009456

Filename

1009456

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