DocumentCode
1722711
Title
Single event upset test results on a prescaler fabricated in IBM´s 5HP silicon germanium heterojunction bipolar transistors BiCMOS technology
Author
Reed, Robert A. ; Marshall, Paul W. ; Ainspan, Herschel ; Marshall, Cheryl J. ; Kim, Hak S. ; Cressler, John D. ; Niu, Guofu ; LaBel, Ken A.
Author_Institution
NASA Goddard Space Flight Center, Greenbelt, MD, USA
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
172
Lastpage
176
Abstract
This paper presents heavy ion and proton single event upset (SEU) test results on a IBM designed high-speed prescaler fabricated in the SiGe HBT BiCMOS process. These are the first published SEU results on this technology
Keywords
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; integrated circuit testing; ion beam effects; prescalers; proton effects; radiation hardening (electronics); semiconductor device testing; semiconductor materials; BiCMOS process; HBT; IBM 5HP high-speed prescaler; SiGe; heavy ion SEU test; heterojunction bipolar transistors; proton SEU test; single event upset test results; BiCMOS integrated circuits; CMOS technology; Circuit testing; Frequency synthesizers; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; NASA; Silicon germanium; Single event upset;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2001 IEEE
Conference_Location
Vancouver, BC
Print_ISBN
0-7803-7199-2
Type
conf
DOI
10.1109/REDW.2001.960469
Filename
960469
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