• DocumentCode
    1722792
  • Title

    CMOS imager based on single photon avalanche diodes

  • Author

    Niclass, Cristiano ; Rochas, Alexis ; Besse, Pierre-Andre ; Popovic, Radivoje S. ; Charbon, Edoardo

  • Author_Institution
    Ecole Polytechnique Federale de Lausanne, Switzerland
  • Volume
    1
  • fYear
    2005
  • Firstpage
    1030
  • Abstract
    In this paper we report on a 32×32 optical imager based on single photon avalanche diodes integrated in CMOS technology. The maximum measured dynamic range is 120dB and the minimum noise equivalent intensity is 1.3 × 10-3 lx. The minimum integration time per pixel is 4 μs. The output of each pixel is digital, thereby requiring no complex read-out circuitry, no amplification, no sample and hold, and no ADC.
  • Keywords
    CMOS image sensors; avalanche photodiodes; 1024 pixel; 32 pixel; 4 mus; CMOS imager; SPAD arrays; optical imager; single photon avalanche diodes; Avalanche photodiodes; CMOS image sensors; CMOS technology; Detectors; Diodes; Integrated circuit measurements; Optical noise; Optoelectronic and photonic sensors; Probability; Pulse measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
  • Print_ISBN
    0-7803-8994-8
  • Type

    conf

  • DOI
    10.1109/SENSOR.2005.1496631
  • Filename
    1496631