DocumentCode
1722792
Title
CMOS imager based on single photon avalanche diodes
Author
Niclass, Cristiano ; Rochas, Alexis ; Besse, Pierre-Andre ; Popovic, Radivoje S. ; Charbon, Edoardo
Author_Institution
Ecole Polytechnique Federale de Lausanne, Switzerland
Volume
1
fYear
2005
Firstpage
1030
Abstract
In this paper we report on a 32×32 optical imager based on single photon avalanche diodes integrated in CMOS technology. The maximum measured dynamic range is 120dB and the minimum noise equivalent intensity is 1.3 × 10-3 lx. The minimum integration time per pixel is 4 μs. The output of each pixel is digital, thereby requiring no complex read-out circuitry, no amplification, no sample and hold, and no ADC.
Keywords
CMOS image sensors; avalanche photodiodes; 1024 pixel; 32 pixel; 4 mus; CMOS imager; SPAD arrays; optical imager; single photon avalanche diodes; Avalanche photodiodes; CMOS image sensors; CMOS technology; Detectors; Diodes; Integrated circuit measurements; Optical noise; Optoelectronic and photonic sensors; Probability; Pulse measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN
0-7803-8994-8
Type
conf
DOI
10.1109/SENSOR.2005.1496631
Filename
1496631
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