DocumentCode :
1722875
Title :
A Resistorless Voltage Reference Source for 90 nm CMOS Technology with Low Sensitivity to Process and Temperature Variations
Author :
Borejko, Tomasz ; Pleskacz, Witold A.
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Warszawa
fYear :
2008
Firstpage :
1
Lastpage :
6
Abstract :
A new compact low power voltage reference source for wireless and embedded applications is described. The reference voltage source has been designed in a mixed-signal UMC 90 nm CMOS process using subthreshold characteristics for generating a constant voltage of 423 mV at supply voltages from 1.1 V to 3.3 V with total current consumption 270 nA. The proposed circuit occupies 0.001 mm2 chip area and achieves less than 110 ppm/degC for all process corners and temperature variation from -40degC to 125 degC. The power supply rejection ratio without any filtering capacitor at 100 Hz and 10 MHz is lower than -50 dB and -30 dB, respectively. The equivalent output voltage noise in the bandwidth from 1 Hz to 10 MHz reaches 218 muVRMS.
Keywords :
CMOS integrated circuits; CMOS; power supply rejection ratio; resistorless voltage reference source; CMOS process; CMOS technology; Capacitors; Character generation; Circuits; Filtering; Low voltage; Power supplies; Temperature sensors; Wireless sensor networks;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design and Diagnostics of Electronic Circuits and Systems, 2008. DDECS 2008. 11th IEEE Workshop on
Conference_Location :
Bratislava
Print_ISBN :
978-1-4244-2276-0
Electronic_ISBN :
978-1-4244-2277-7
Type :
conf
DOI :
10.1109/DDECS.2008.4538753
Filename :
4538753
Link To Document :
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