DocumentCode :
1722894
Title :
Vertically integrated silicon single crystalline MEMS switch
Author :
Aharon, Oren ; Feldman, Shai ; Nemirovsky, Yael
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Volume :
1
fYear :
2005
Firstpage :
1047
Abstract :
A DC to RF shunt contact micro-electro-mechanical switch was fabricated. The fabrication of the MEMS device was preformed using a bulk micromachining process on an SOI wafer followed by a vertical integration to a microwave circuit wafer. The pull-in voltage and natural frequency of the switch were characterized. Also, RF performances at both switch states were measured. The concept of the packaged switch described in this paper enables us to offer a-stand alone switch, independent of the RF circuit substrate material or technology being used.
Keywords :
elemental semiconductors; hermetic seals; micromachining; microswitches; silicon; silicon-on-insulator; wafer bonding; 54 V; 9.87 kHz; DC/RF shunt contact switch; SOI wafer; Si; bulk micromachining; hermetically sealed package; microwave circuit wafer vertical integration; packaged stand alone switch; silicon single crystalline MEMS; switch natural frequency; switch pull-in voltage; vertically integrated MEMS switch; Contacts; Crystallization; Fabrication; Microelectromechanical devices; Micromachining; Microswitches; Radio frequency; Silicon; Switches; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
Type :
conf
DOI :
10.1109/SENSOR.2005.1496635
Filename :
1496635
Link To Document :
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