Title :
A three-level charge pumping model for submicronic MOSFET interface defaults simulation
Author :
Sellami, M. ; Bouchemat, M. ; Kahouadji, M. ; Djahli, F.
Author_Institution :
Dept. of Electron., Univ. de Bejaia, Algeria
Abstract :
Because of its efficiency, its high precision and its easy use regarding to classical techniques of Si- Sio2 (C-V, DLTS, Conductance...), interface characterization, the charge pumping technique has seen a large evolution these years. Many improvements have been made, other derivation techniques have been developed (at three-level charge pumping, spectroscopic charge pumping ...). This technique is particularly used for very slight geometry MOS transistors damaging, where other techniques have no utility. This damaging often leads to the creation of a fixed trapped charge in the oxide coat and active electronically defaults in the oxide semiconductor interface after the application of ageing constraint (ionizing radiation, injection carrier). This ageing is so pronounced when the dimensions are slight this represents the main obstacle that the microelectronics must face. In this article we simulate the three-level charge pumping technique with SPICE3F4 simulator. This simulation will permit the obtaining of spatial and energetic spread of defaults at the interface. The simulation results will be compared to the measurements results that have been made.
Keywords :
MOSFET; ageing; charge injection; electron traps; interface states; semiconductor device models; ageing constraint; carrier injection; energetic spread; fixed trapped charge; ionizing radiation; oxide semiconductor interface; spatial spread; submicronic MOSFET interface defaults simulation; three-level charge pumping model; transistor damaging; Aging; Capacitance-voltage characteristics; Charge pumps; Electron traps; Geometry; Ionizing radiation; Lead compounds; MOSFET circuits; Microelectronics; Spectroscopy;
Conference_Titel :
Solid Dielectrics, 2004. ICSD 2004. Proceedings of the 2004 IEEE International Conference on
Print_ISBN :
0-7803-8348-6
DOI :
10.1109/ICSD.2004.1350374