Title :
Low phase noise, FBAR-based voltage controlled oscillator without varactor
Author :
Kim, Jong Jin ; Zhang, Hao ; Pang, Wei ; Yu, Hongyu ; Kim, Eun Sok
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
A Colpitts voltage controlled oscillator (VCO) at 1.1 GHz is designed with a film bulk acoustic resonator (FBAR) as the frequency control element. The oscillator achieves an extremely low phase noise of -115 dBc/Hz at 10 kHz offset, which is 19 dB better than that of an LC oscillator. Voltage control of the oscillation frequency is obtained by applying a DC voltage on the FBAR, unlike a conventional VCO that uses a PN junction varactor (a significant noise contributor) to vary the oscillation frequency. The frequency tunability of the VCO is approximately -12 kHz/V between -5 V and +10 V.
Keywords :
UHF oscillators; acoustic resonators; bulk acoustic wave devices; circuit tuning; phase noise; voltage-controlled oscillators; -5 to 10 V; 1.1 GHz; Colpitts oscillator; FBAR frequency control element; FBAR-based VCO; film bulk acoustic resonator; frequency tunability; low phase noise oscillator; voltage controlled oscillator; Artificial intelligence; CMOS process; Diodes; Film bulk acoustic resonators; Frequency; Phase noise; Silicon; Varactors; Voltage-controlled oscillators; Zinc oxide;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
DOI :
10.1109/SENSOR.2005.1496639
