A lateral field-emission RF MEMS device [resonator filter applications]

Author

Yamashita, Kiyotaka ; Sun, Winston ; Kakushima, Kuniyuki ; Fujita, Hiroyuki ; Toshiyoshi, Hiroshi

Author_Institution

Inst. of Ind. Sci., Univ. of Tokyo, Japan

Volume

1

fYear

2005

Firstpage

1096

Abstract

We present the concept, fabrication, simulation, and experimental result of a field emission RF MEMS device based on SOI technology. The objective of this project is to enable RF filtering by means of a mechanical resonator. Current results include: (1) successful demonstration of the field emission effect on a reference device between silicon tips at ∼5 μm gap distance below 2×10^-8 torr high vacuum environment; and (2) sacrificial release of the 2^nd generation device with integrated micro-oscillator.

Keywords

band-pass filters; field emission; micromechanical devices; micromechanical resonators; radiofrequency filters; resonator filters; silicon-on-insulator; vacuum microelectronics; 2×10^-8 torr; 5 micron; RF filtering; SOI technology; Si; band-pass filter; device sacrificial release; field emission effect; high vacuum environment; integrated microoscillator; lateral field-emission RF MEMS device; mechanical resonator; resonator filter; silicon tips; vacuum microelectronics; Anodes; Fabrication; Frequency; Micromechanical devices; Oscillators; Radiofrequency microelectromechanical systems; Resonator filters; Silicon; Space technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on

Print_ISBN

0-7803-8994-8

Type

conf

DOI

10.1109/SENSOR.2005.1496647

Filename

1496647