Title :
5GHz low-phase-noise oscillator based on FBAR with low TCF
Author :
Zhang, Hao ; Kim, Jongjin ; Pang, Wei ; Yu, Hongyu ; Kim, Eun Sok
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
A 5 GHz oscillator with phase noise of -109.5 dBc/Hz at 100 kHz offset (more than 10 dBc/Hz better than the best LC oscillator and 4 dBc/Hz better than the best value reported in the literature) has recently been demonstrated with a 5 GHz Al/ZnO/Al/SiO2 FBAR (film bulk acoustic resonator). The 5 GHz FBAR is fabricated through a simple, clean, and CMOS-compatible fabrication process, and is measured to have Q of about 300, Kt2 of 4.3% and TCF (temperature coefficient of frequency) of -8.7 ppm/°C between 25 and 100°C.
Keywords :
Q-factor; acoustic resonators; aluminium; bulk acoustic wave devices; microwave oscillators; phase noise; silicon compounds; zinc compounds; 25 to 100 degC; 5 GHz; Al-ZnO-Al-SiO2; CMOS-compatible fabrication process; FBAR Q-factor; film bulk acoustic resonator; low TCF FBAR; low-phase-noise oscillator; temperature coefficient of frequency; Artificial intelligence; Band pass filters; Fabrication; Film bulk acoustic resonators; Frequency measurement; Local oscillators; Pollution measurement; Resonant frequency; Silicon; Zinc oxide;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
DOI :
10.1109/SENSOR.2005.1496648
