Title :
Dynamics of oxide confinement vertical cavity semiconductor lasers
Author :
Lysak, V. ; Sukhoivanov, I. ; Ivanov, P. ; Marciniak, M.
Author_Institution :
Nat. Univ. of Radio Electron., Kharkov, Ukraine
fDate :
6/24/1905 12:00:00 AM
Abstract :
In this work we investigate pulse behaviour of oxide confinement vertical cavity surface emitting laser for main and side modes. It´s shown that the pulse delay time increases with increasing of structure radius. It allows to uniformity of pulse form for the main and side modes.
Keywords :
diffusion; laser modes; laser theory; semiconductor device models; semiconductor lasers; surface emitting lasers; VCSELs; main modes; oxide confinement vertical cavity surface emitting laser; pulse behaviour; pulse delay time; pulse form; side modes; structure radius; Carrier confinement; Electron optics; Equations; Laser modes; Optical resonators; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Transparent Optical Networks, 2002. Proceedings of the 2002 4th International Conference on
Print_ISBN :
0-7803-7375-8
DOI :
10.1109/ICTON.2002.1009529
