Title :
Low power and low voltage VT extractor circuit and MOSFET radiation dosimeter
Author :
Siebel, O.F. ; Schneider, M.C. ; Galup-Montoro, C.
Author_Institution :
Dept. of Electr. Eng., Fed. Univ. of Santa Catarina, Florianopolis, Brazil
Abstract :
This work discusses two fundamental blocks of an in vivo MOS dosimeter, namely the radiation sensor and the VT-extractor circuit. It is shown that threshold extractor circuits based on an all-region MOSFET model are very appropriate for low power design. The accuracy of the extractor circuits allows using the PMOS transistors of the integrated circuit CD4007 as the radiation sensor in a dosimeter for radiotherapy applications.
Keywords :
MOSFET; dosimeters; dosimetry; radiation detection; radiation therapy; MOSFET radiation dosimeter; PMOS transistors; all-region MOSFET model; in vivo MOS dosimeter; integrated circuit CD4007; low power VT extractor circuit; low power design; low voltage VT extractor circuit; radiation sensor; radiotherapy applications; Integrated circuits; Ionizing radiation; MOSFET circuits; MOSFETs; Sensitivity; Threshold voltage;
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2012 IEEE 10th International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0857-1
Electronic_ISBN :
978-1-4673-0858-8
DOI :
10.1109/NEWCAS.2012.6329016
