Title : 
KrF excimer laser induced selective non-planar metallization
         
        
            Author : 
Maeda, Shigeo ; Minami, Kazuyuki ; Esashi, Masayoshi
         
        
            Author_Institution : 
Fac. of Eng., Tohoku Univ., Sendai, Japan
         
        
        
            fDate : 
6/16/1905 12:00:00 AM
         
        
        
        
            Abstract : 
Selective non-planar metallization method was developed. Ultraviolet photochemical deposition of chromium from gas phase precursors provided superior resolution, but deposited film was contaminated with carbon and oxygen and showed low electrical conductivity. Another type of metal line patterning process using KrF excimer laser induced chromium deposition was developed. Chromium film deposited was used as a mask material for patterning of the underlying nickel film. Nickel film was coated by electroless plating method which is suitable for three dimensional structures. This selective non-planar metallization process could be used smart catheters. As an example of smart catheters, a tactile sensor was proposed and fabricated at the end of the catheter. The structure of the tactile sensor was shaped by excimer laser ablation process. The electrodes and the metal lines of tactile sensors were patterned using laser induced process
         
        
            Keywords : 
chromium; intelligent sensors; masks; microsensors; nickel; pulsed laser deposition; semiconductor device metallisation; tactile sensors; Cr-Ni; KrF; KrF excimer laser induced deposition; electroless plating method; mask material; metal line patterning process; selective nonplanar metallization; smart catheters; tactile sensor; Catheters; Chromium; Conductive films; Conductivity; Gas lasers; Laser ablation; Metallization; Nickel; Photochemistry; Tactile sensors;
         
        
        
        
            Conference_Titel : 
Micro Electro Mechanical Systems, 1994, MEMS '94, Proceedings, IEEE Workshop on
         
        
            Conference_Location : 
Oiso
         
        
            Print_ISBN : 
0-7803-1833-1
         
        
        
            DOI : 
10.1109/MEMSYS.1994.555601