Title :
An ultra-low-voltage CMOS mixer using switched-transconductance, current-reuse and dynamic-threshold-voltage gain-boosting techniques
Author :
Shirazi, Amir Hossein Masnadi ; Mirabbasi, Shahriar
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of British Columbia, Vancouver, BC, Canada
Abstract :
In this paper, an architecture for ultra-low-voltage radio-frequency (RF) CMOS mixers is introduced. The structure uses switched-transconductance technique in conjunction with current-reuse and dynamic-threshold-voltage gain-boosting techniques to reduce the required supply voltage and power consumption while providing a high conversion gain. As a proof-of-concept, a 2.5-GHz down-conversion mixer is designed and laid out in a 0.13-μm CMOS process. Post-layout simulation results show that the mixer achieves a conversion gain of 13 dB, double-side-band (DSB) noise figure (NF) of 12.7 dB and input-referred third-order intercept point (IIP3) of -3.08 dB while consuming 480 μW from a 0.35-V supply.
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF mixers; CMOS process; DSB NF; IIP3; current-reuse gain-boosting techniques; double-side-band noise figure; dynamic-threshold-voltage gain-boosting techniques; frequency 2.5 GHz; gain 13 dB; input-referred third-order intercept point; noise figure 12.7 dB; post-layout simulation; power 480 muW; power consumption; size 0.13 mum; switched-transconductance technique; ultralow-voltage RF CMOS mixers; ultralow-voltage radiofrequency CMOS mixers; voltage 0.35 V; CMOS integrated circuits; Gain; Inverters; Mixers; Switches; Threshold voltage; Transconductance;
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2012 IEEE 10th International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0857-1
Electronic_ISBN :
978-1-4673-0858-8
DOI :
10.1109/NEWCAS.2012.6329039
