Title :
Self aligned BM for VLSI using a new diffusion technique for shallow base formation
Author :
Johnson, F.S. ; Harris, G.S. ; Wortman, J.J. ; özturk, M.C.
Author_Institution :
North Carolina State University
fDate :
6/15/1905 12:00:00 AM
Keywords :
Annealing; Bipolar transistors; Boron; Contact resistance; Etching; Fabrication; Implants; Ion implantation; Shadow mapping; Very large scale integration;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009562
