Title :
Base thickness and high frequency performance of SiGe HBTs
Author :
Gruhle, A. ; Kibbel, H. ; Erben, U. ; Kasper, E.
Author_Institution :
Daimler-Benz AG, Research Center
fDate :
6/15/1905 12:00:00 AM
Keywords :
Acceleration; Boron; Bridges; Doping; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Space technology;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009563
