• DocumentCode
    1724543
  • Title

    113-GHz fT graded-base SiGe HBTs

  • Author

    Crabbe, E. ; Meyerson, B. ; Harame, D. ; Stork, I. ; Megdanis, A. ; Cotte, I. ; Chu, J. ; Gilbert, Markus ; Stanis, C. ; Comfort, I. ; Patton, G. ; Subbanna, S.

  • Author_Institution
    IBM Research Division, T. J. Watson Research Center
  • fYear
    1993
  • Firstpage
    22
  • Lastpage
    23
  • Abstract
    A novel low-thermal cyclc proccss was used to fabricatc epitaxial SiGe-base heterojunction bipolar transistors (HBTs) with record unity current gain cutoff frequencies. The process includes an in situ phosphorus-dopcd polysilicon emitter which requires only a 800°C-10s anneal. A peak fT of 113 GHz at VCB of 1V was obtained for an intrinsic base sheet resistance of 7 kΩ/square.
  • Keywords
    Annealing; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Semiconductor films; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1993. 51st Annual
  • Conference_Location
    Santa Barbara, CA, USA
  • Type

    conf

  • DOI
    10.1109/DRC.1993.1009564
  • Filename
    1009564
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1724543