Title :
Temperature and scaling behavior of Strained-Si N-MOSFETs
Author :
Weise, J. ; Hoyt, J.L. ; Gibbons, J.F.
Author_Institution :
Solid State Electronics Lab.
fDate :
6/15/1905 12:00:00 AM
Keywords :
Buffer layers; Electron mobility; MOSFET circuits; Resistors; Scattering; Strain control; Temperature control; Thermal conductivity; Thermal resistance; Transconductance;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009565
