Time-domain characterization of nonlinear operation of an AlGaN/GaN HEMT

A method to extract input and output voltage and current time-domain wavefroms has been applied to characterize operation of a discrete high-power AIGaN/GaN HEMT under different bias and source and load impedance conditions. It provides valuable insight into how various device parameters, such as knee voltage, DC-to- RF dispersion and nonlinear capacitances affect large-signal microwave performance. Time domain waveforms will be presented.